electron - beam lithography造句

• The most prevalent procedure is to use photolithography or electron-beam lithography to produce a pattern in a layer of photoresist on the surface of a silicon wafer
  最常用的步骤是用光蚀刻或电子束蚀刻法，在矽晶圆表面的光阻层上制作出图案。
• Although the creation of a finely detailed bas-relief master is expensive because it requires electron-beam lithography or other advanced techniques, copying the pattern on pdms stamps is cheap and easy
  虽然得花上大笔金钱，才能以电子束蚀刻或其他高阶技术制作出有精密细节的浅浮雕主片，但要复制pdms压模的图案却是便宜又容易。
• Abstract : a new method for determining proximity parameters,, and in electron-beam lithography is introduced on the assumption that the point exposure spread function is composed of two gaussians . a single line is used as test pattern to determine proximity effect parameters and the normalization approach is adopted in experimental data transaction in order to eliminate the need of measuring exposure clearing dose of the resist . furthermore, the parameters acquired by this method are successfully used for proximity effect correction in electron-beam lithography on the same experimental conditions
  文摘:在电子散射能量沉积为双高斯分布的前提下,提出了一种提取电子束光刻中电子散射参数,和的新方法.该方法使用单线条作为测试图形.为了避免测定光刻胶的显影阈值,在实验数据处理中使用归一化方法.此外,用此方法提取的电子散射参数被成功地用于相同实验条件下的电子束临近效应校正
• Abstract : a new method for determining proximity parameters,, and in electron-beam lithography is introduced on the assumption that the point exposure spread function is composed of two gaussians . a single line is used as test pattern to determine proximity effect parameters and the normalization approach is adopted in experimental data transaction in order to eliminate the need of measuring exposure clearing dose of the resist . furthermore, the parameters acquired by this method are successfully used for proximity effect correction in electron-beam lithography on the same experimental conditions
  文摘:在电子散射能量沉积为双高斯分布的前提下,提出了一种提取电子束光刻中电子散射参数,和的新方法.该方法使用单线条作为测试图形.为了避免测定光刻胶的显影阈值,在实验数据处理中使用归一化方法.此外,用此方法提取的电子散射参数被成功地用于相同实验条件下的电子束临近效应校正